| PART |
Description |
Maker |
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| BAT165 |
Schottky Diodes - Low power Silicon AF Schottky rectifier diode
Silicon Schottky Diode
|
Infineon Technologies AG
|
| BAT165 Q62702-A1190 BAT165Q62702A1190 |
CY8C24123A CY8C24223A, CY8C24423A PSoC® Mixed-Signal Array
Silicon Schottky Diode (Low-power Schottky rectifier diode Miniature plastic package for surface mounting SMD)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IRF7807VD2PBF |
Co-Pack N-channel HEXFET? Power MOSFET and Schottky Diode
FETKY MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
| BAT14 BAT14-03W |
Silicon Schottky Diode
Schottky Diodes - RF Schottky diode for DBS mixer application to 12GHz
|
Infineon Technologies A...
Infineon Technologies AG
|
| NSR0240P2T5G |
40V 0.2A low IR SOD-923 Schottky Diode 0.2 A, 40 V, SILICON, SIGNAL DIODE
Schottky Barrier Diode
|
ON Semiconductor
|
| B20A60VIC |
M39012 MIL RF CONNECTOR 肖特基型二极管堆栈（开关式电源，转换器
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER)
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
Schottky Barrier Diode
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| NTLGF3402PT1G NTLGF3402P NTLGF3402PT2G |
Power MOSFET and Schottky Diode −20 V, −3.9 A FETKY, P−Channel, 2.0 A Schottky Barrier Diode, DFN6
|
ON Semiconductor
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
