| PART |
Description |
Maker |
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode
3.3 volt zener diode
5.1 volt zener diode
3.9 volt zener diode
2.4 volt zener diode
LEADLESS PACKAGE FOR SURFACE MOUNT
2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
4.7 volt zener diode
5.6 volt zener diode
2.2 volt zener diode
3.6 volt zener diode
2.0 volt zener diode
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
|
| X28HC256D-12 X28HC256PZ-12 X28HC256PZ-15 X28HC256P |
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 90 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 32K X 8 EEPROM 5V, 200 ns, PDSO28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-PDIP 32K X 8 EEPROM 5V, 90 ns, PDIP28
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC 32K X 8 EEPROM 5V, 90 ns, PQCC32
256K, 32K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 32K X 8 EEPROM 5V, 90 ns, PQCC32
5V, Byte Alterable EEPROM
|
Intersil, Corp.
Intersil Corporation
|
| X28HT010 |
High Temperature, 5 Volt, Byte Alterable E2PROM 128K x 8 Bit
|
Xicor
|
| 1N4580 1N4580A 1N4570 1N4570A 1N4571 1N4571A 1N456 |
6.4 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
IPC 5/12-STGCL-7,62
|
MICROSEMI[Microsemi Corporation]
|
| AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏，只有闪存
|
Atmel Corp.
Atmel, Corp.
|
| AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby
THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta
DB25SC37
DSUB
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| 1N4783 1N4783A 1N4777A 1N4777 1N4778A 1N4778 1N478 |
Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极 参考温度补偿齐纳二极管（温度补偿齐纳基准二极管
8.5 VOLT NOMINAL ZENER VOLTAGE 5%
|
Microsemi, Corp.
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
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