PART |
Description |
Maker |
VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules From old datasheet system IGBT Modules: Buck Configurated IGBT Modules IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
|
VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IX |
IGBT Modules: Boost Configurated IGBT Modules 2-WIRE FIELD PROGRAMMABLE W/TIN PLATING
|
IXYS[IXYS Corporation]
|
CM150E3U-24H |
IGBT Modules:1200V IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXGN50N60BD2 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID75-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International http://
|
OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|