| PART |
Description |
Maker |
| UPD8862 UPD8862CY |
(2700 2700)-pixel x 3-color CCD linear image sensor
(2700 2700) PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR
|
NEC
|
| SI5933DC-E3 |
2700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| FDC6305 FDC6305N |
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET 2700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| ADL532008 ADL5320-EVALZ ADL5320ARKZ-R7 ADL5320 |
400 MHz to 2700 MHz Pre-driver RF Amplifier 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
400 MHz to 2700 MHz RF Driver Amplifier
|
Analog Devices, Inc.
|
| CMM2305 CMM2305-AR-0000 CMM2305-AR-000T |
800 TO 2700 MHZ BROAD BAND DRIVER AMPLIFIER
800 to 2700 MHz broadband driver amplifier
|
CELERITEK
ETC[ETC]
List of Unclassifed Manufacturers
|
| FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
STMicroelectronics N.V.
MICROSEMI CORP
|
| SUP60N10-16L |
N-Channel 100-V (D-S) 175C MOSFET
From old datasheet system
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
N-Channel MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| FDT86113LZ |
100V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
|
Fairchild Semiconductor
|
| SUP90N10-09 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| 2SJ289JFTD 2SJ189-TL 2SK1839JJTL |
0.5 A, 100 V, 7.5 ohm, P-CHANNEL, Si, POWER, MOSFET PCP, SC-62, 3 PIN
4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DOMINANT Opto Technologies Sdn. Bhd.
|
|
