| PART |
Description |
Maker |
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PM25RHB120 |
TRANSISTOR IGBT POWER MODULE
|
Powerex
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| BSM300GB120DLC |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
|
Eupec
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| VDI75-12S3 VID75-12S3 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 75A条一（c
|
Analog Devices, Inc.
|
| IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Diodes, Inc.
|
| IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A- |
From old datasheet system
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No
IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes
PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28
Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
