PART |
Description |
Maker |
TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz high power COMMON BASE bipolar transistor.
|
Microsemi, Corp. ETC[ETC] GHZTECH[GHz Technology] List of Unclassifed Manufacturers
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1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
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Microsemi, Corp. Microsemi Corporation
|
0912-7 0912-7-3 0912-7-2 |
From old datasheet system Intemally Matched, Common Base Transistor 7 W, 50 V internally matched, common base transistor
|
List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc. Acrian
|
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz BJT
|
GHZTECH[GHz Technology]
|
MS2472 |
Air DME 1025-1150 MHz, Class C, Common Base, Pulsed; P(out) (W): 550; P(in) (W): 150; Gain (dB): 5.6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: M112 L BAND, Si, NPN, RF POWER TRANSISTOR RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
|
Microsemi, Corp. Advanced Power Technology
|
1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
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EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
EPE6030 |
10 Base-T Module with Enhanced Common Mode Attenuation
|
PCA ELECTRONICS INC.
|
MDS1100 |
a high power COMMON BASE bipolar transistor.
|
Microsemi Corporation
|
EPE6130S |
10 Base-T Isolation Transformer with Common Mode Choke
|
PCA ELECTRONICS INC.
|
UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz UHF 225-400 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 8; Gain (dB): 0; Vcc (V): 28; Cob (pF): 70; fO (MHz): 0; Case Style: 55HW-2 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation Vishay Semiconductors
|
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor BJT
|
GHz Technology
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