| PART |
Description |
Maker |
| SRP1255-1R2M SRP1255-2R2M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 1.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
BOURNS INC
|
| BC328 BC327 BC327-16 BC328-16 BC327-25 BC327-40 Q6 |
Si-Epitaxial PlanarTransistors
From old datasheet system
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管（高电流增益高集电极电流低集电极发射极饱和电压
|
SIEMENS A G
Diotec Elektronische
Infineon
Diotec Semiconductor
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SDR0503-390KL SDR0503-821KL SDR0503-122JL SDR0503- |
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 1200 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 5600 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Series:SDR0503; Inductance:47uH; Inductance Tolerance: /- 10 %; Q Factor:20; Self Resonant Frequency:14MHz; Terminal Type:PCB Surface Mount; Core Material:Ferrite DR; Current Rating:750mA; Mounting Type:Surface Mount
Power Inductor; Inductor Type:Power; Inductance:3.3mH; Inductance Tolerance: 5 %; Current Rating:0.062A; Series:SDR0503; Core Material:Ferrite DR; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Q Factor:40 RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| BC869 |
High current. Three current gain selections. 1.2 W total power dissipation.
|
TY Semiconductor Co., L...
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| FS100UM-03 |
100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Bench Power Supply; Output Voltage:30V; Output Current:3A; Number of Outputs:3; Calibrated:Yes; Certificate of Calibration:Yes; Output Current 2:.5A; Output Current 3:.5A; Output Voltage 2:12V; Output Voltage 3:5V
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BFY50 BFY51 BFY52 |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
NPN medium power transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
