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K9F1208B0C - 64M x 8 Bits NAND Flash Memory

K9F1208B0C_4569556.PDF Datasheet
 Full text search : 64M x 8 Bits NAND Flash Memory
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K9F1208R0C 64M x 8 Bits NAND Flash Memory
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SAMSUNG[Samsung semiconductor]
K9F1208B0B K9F1208R0B K9F1208U0B 64M x 8 Bit NAND Flash Memory
 SAMSUNG[Samsung semiconductor]
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
 Toshiba Corporation
K9F1208D0A K9F1208U0A K9F1216U0A (K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
 Samsung semiconductor
K9F1208U0A K9F1216U0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
 SAMSUNG[Samsung semiconductor]
EDS6416AHBH-75-E EDS6416CHBH-75-E 64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
 Elpida Memory, Inc.
TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D Flash - NAND
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 TOSHIBA[Toshiba Semiconductor]
ST6294M8 NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
 
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