| PART |
Description |
Maker |
| BYV118F BYV118F-35 BYV118F-40 BYV118F-45 BYV118X B |
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 10 A, 40 V, SILICON, RECTIFIER DIODE
DB-25 MALE CONN KIT CRIMP 10 A, 40 V, SILICON, RECTIFIER DIODE
CRIMP SHELLS DB25 MALE 10 A, 35 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier 10 A, 35 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CR2-XXX CR2-005 CR2-010 CR2-020 CR2-040 CR2-060 CR |
Leaded Rectifier General Purpose
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 1200 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2安培整流0-1500伏轴向环氧案例枚CR2系列
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
2 AMP RECTIFIER 50-1500 VOLTS AXIAL LEAD EPOXY CASE CR2 SERIES 2 A, SILICON, RECTIFIER DIODE
|
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
Bourns, Inc.
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| S2M |
1.5A General Purpose Rectifier; Package: DO-214AA(SMB); No of Pins: 2; Container: Tape & Reel 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
|
Fairchild Semiconductor, Corp.
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A |
Standard Rectifier (trr more than 500ns)
(1N2xxx) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) SILICON POWER RECTIFIER
SILICON POWER RECTIFIER 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 350 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
SILICON POWER RECTIFIER
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| CR80-120 CR80-010 CR80-020 CR80-040 CR80-060 CR80- |
80 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
80 AMP GENERAL PURPOSE SILICON RECTIFIER 100 THRU 1200 VOLTS
Leaded Rectifier General Purpose
|
CENTRAL[Central Semiconductor Corp]
|
| CBR1-D100S CBR1-D060S CBR1-D020S CBR1-D020S10 CBR1 |
SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER
SURFACE MOUNT1 AMP SILICON BRIDGE RECTIFIER
|
Central Semiconductor Corp
Central Semiconductor C...
|
| 1N4004NL |
1.0A General Purpose Rectifier; Package: DO-41; No of Pins: 2; Container: Tape & Reel 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Fairchild Semiconductor, Corp.
|
| GBJ1010 GBJ10005 GBJ1001 GBJ1002 GBJ1004 GBJ1006 G |
Aluminum Polymer SMT Capacitor; Capacitance: 6.8uF; Voltage: 25V; Case Size: 6.3x6 mm; Packaging: Tape & Reel 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
10 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
Aluminum Polymer SMT Capacitor; Capacitance: 82uF; Voltage: 20V; Case Size: 10x8 mm; Packaging: Tape & Reel 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
|
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| 7R8S 10R8S 12R8S 15R8S 4R8S 5R8S |
40 AMP 40-150 VOLTS 50 nsec RECTIFIER 100 A, SILICON, RECTIFIER DIODE, DO-5
|
Solid States Devices, I...
Solid States Devices, Inc.
SSDI[Solid States Devices, Inc]
Solid State Devices, Inc.
|
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