PART |
Description |
Maker |
NX6342EP |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION 1 310nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
NX8349TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
NX7338BF-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
NX7339BB-AA |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
http://
|
NX7337BJ-AA-15 |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|