| PART |
Description |
Maker |
| HYM72V64736T8 HYM72V64736LT8-H |
64Mx72|3.3V|K/H|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Samsung Semiconductor Co., Ltd.
HYNIX SEMICONDUCTOR INC
|
| HYE18L512320BF-7.5 HYB18L512320BF-7.5 |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
http://
Qimonda AG
|
| HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF |
256Mbit (16Mx16bit) Mobile SDR Memory
|
Hynix Semiconductor
|
| W989D6CBGX6E W989D6CBGX6I W989D6CBGX7E W989D2CBJX6 |
512Mb Mobile LPSDR
|
Winbond
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3)
512Mb (64Mx8) DDR200 (2-2-2)
512Mb (32Mx16) DDR200 (2-2-2)
512Mb (128Mx4) DDR200 (2-2-2)
512Mb (64Mx8) DDR333 (2.5-3-3) ？的512Mb4Mx8DDR333内存.5-3-3）？
|
Electronic Theatre Controls, Inc.
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT48H32M16LFCJ-8L MT48H16M32LFCJ-8LIT MT48H16M32LG |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology, Inc.
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| TS512MJFV60 |
512MB USB2.0 JetFlash?/a>
512MB USB2.0 JetFlash垄芒
|
Transcend Information. Inc.
|
| HFDOM40B-064S2 HFDOM40B-064S1 HFDOM40B-064SX HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
