| PART |
Description |
Maker |
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KM416S1020BT-G10T |
CMOS 16M-Bit SDRAM
|
ETC
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MBM29F016A-90 MBM29F016A-90PFTR MBM29F016A MBM29F0 |
FLASH MEMORY CMOS 16M (2M x 8) BIT
|
SPANSION[SPANSION]
|
| MX27C1610 |
16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
|
Macronix International
|
| MBM29F160TE70TR MBM29F160BE70TR MBM29F160TE70 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
|
SPANSION[SPANSION]
|
| MX25L1608EM2I12G |
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| GM71V64403A |
(GM71VS64403AL / GM71V64403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| MBM29DL161BD |
(MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
|
Fujitsu Media Devices
|
