PART |
Description |
Maker |
NC504SM-15 |
Surface Mount Noise Sources 200 kHz to 3.5 GHz
|
Micronetics, Inc.
|
NC503SM-28 |
Surface Mount Noise Sources 200 kHz to 2 GHz
|
Micronetics, Inc.
|
NC502SM-28 |
Surface Mount Noise Sources 200 kHz to 1 GHz
|
Micronetics, Inc.
|
SMN7106-D1C |
Surface Mount Noise Sources 200 kHz to 12 MHz
|
http:// Micronetics, Inc.
|
AB05 |
LUXEON? Power Light Sources
|
Lumileds Lighting Company
|
FRP1000 FRP1010 FRP1015 FRP1020 FRP2010CC FRP2020C |
Ultra-fast POWER planar?/a> Rectifiers 10-20 A, 50-200 V Ultra-fast POWER planar Rectifiers 10-20 A, 50-200 V Ultra-fast POWER planar⑩ Rectifiers 10-20 A, 50-200 V Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 V Ultra-fast POWER planarRectifiers 10-20 A, 50-200 V CAP 120PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
NMA5109-A1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
CNS7105-D1C |
High Power Broadband Noise Sources 100 kHz to 3 MHz
|
Micronetics, Inc.
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
NMA5112-B1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
NMA2512-2T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
MTY55N20E MTY55N20E_D ON2720 |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semi
|
|