| PART |
Description |
Maker |
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STW11NK100Z |
N-CHANNEL 1000V 1.1 OHM 8.3A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 1000V - 1.1W - 8.3A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| FQH8N100C |
N-Channel QFETMOSFET 1000V, 8.0A, 1.45
1000V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| APT1001R1BN APT1001R3BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
LJT 56C 48#20 8#16 PIN RECP
Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No N沟道增强型高压功率MOSFET
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 1000V 9A 1.100 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 0.880 Ohm
|
Advanced Power Technology Ltd.
|
| APT10086BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
