PART |
Description |
Maker |
V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
GM71C16160AJ-7 GM71CS16160ALJ-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Electronic Theatre Controls, Inc.
|
HM51W16160AJ-6 HM51W16160ALTT-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
E-Z Hook,A Div. of Tektest, Inc.
|
NN514170LJ-45 NN514170LJ-50 NN514170LJ-70 NN514170 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Microchip Technology, Inc.
|
UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
GM71VS65163CLT-6 GM71VS65163CLJ-5 GM71VS65163CLJ-6 |
x16 EDO Page Mode DRAM
|
|
MX26F128J3XCC-15 MX26F128J3XCC-12 MX26F128J3TC-12 |
Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY 旺宏NBit商标家庭128M的内存[x8/x16]V页模式eLiteFlash商标记忆
|
Electronic Theatre Controls, Inc.
|
M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位(16777216 - Word位)动态随机存储器 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50 16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|