| PART |
Description |
Maker |
| ZXMC10A816N8 ZXMC10A816N8TC |
100V SO8 Complementary Dual enhancement mode MOSFET
|
Diodes Incorporated
|
| CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
| CFD2059R CFD2059O |
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 80 hFE. Complementary CFB1367R
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 40 - 240 hFE. Complementary CFB1367
30.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFB1367O
|
Continental Device India Limited
|
| STS3C2F100 |
N-CHANNEL 100V - 0.110 OHM - 3A SO-8 P-CHANNEL 100V - 0.320 OHM - 1.5A SO-8 COMPLEMENTARY PAIR STripFET™ POWER MOSFET
|
ST Microelectronics
|
| ZXMN3G32DN8TA ZXMN3G32DN8 |
30V SO8 dual N-channel enhancement mode MOSFET
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXMN3F318DN8 ZXMN3F318DN8TA |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
| TIP42 TIP41 |
Complementary Silicon Power Transistor 6A/40~100V/65W
|
Nell Semiconductor Co., Ltd
Nell Semiconductor Co.,...
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
| T74LS113AD1 T74LS113AC1 T74LS113AM1 T74LS113AB1 |
LS SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP14 CERAMIC, DIP-14
LS SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PQCC20 PLASTIC, LCC-20
LS SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO14 MICRO, SO-14
LS SERIES, DUAL NEGATIVE EDGE TRIGGERED J-K FLIP-FLOP, COMPLEMENTARY OUTPUT, PDIP14 PLASTIC, DIP-14
|
ST Microelectronics
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| MPQ6001N MPQ6002 MPQ6502N MPQ6001 MPQ6002N MPQ6501 |
QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS 四双行中的硅互补对三极管
(MPQ6001 / MPQ6002 / MPQ6501 / MPQ6502) QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
