| PART |
Description |
Maker |
| KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| 2SC2614 |
HIGH VOLTAGE HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| NTE2319 |
Silicon NPN Transistor High Voltage, High Speed Power Switch
|
NTE[NTE Electronics]
|
| KSC5302D KSC5302DTU |
NPN Silicon Transistor
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| ET191 |
TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| KSC5302DI |
High Voltage & High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC5305 2SC5305-15 |
HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
|
Unisonic Technologies
|
| BUL52AFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL56B BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
