PART |
Description |
Maker |
IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36 512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc] ISSI [Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc] Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
MX26LV004BQC-55 MX26LV004BTC-55 MX26LV004TTC-70 |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO40 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Macronix International Co., Ltd.
|
IS61LV51216-10M IS61LV51216-10MI IS61LV51216-10T I |
512K x 16 HIGH SPEED ASYNCHRONOUS 12k × 16高速异
|
Electronic Theatre Controls, Inc. ISSI[Integrated Silicon Solution, Inc] ETC Integrated Silicon Solution Inc
|
IS61C5128 |
512K x 8 High Speed CMOS Static RAM
|
Integrated Silicon Solution
|
IS61LV5128 IS61LV5128-10T IS61LV5128-12TI IS61LV51 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM 512K x 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
IC61LV5128 IC61LV5128-10K IC61LV5128-10KI IC61LV51 |
512K x 8 HIGH-SPEED CMOS STATIC RAM ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125 Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125 ; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8,统一座低电压单电源闪 CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8,统一座低电压单电源闪 CAP RF 27PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 CAP RF 24PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 CAP RF 22PF 250V 0603 SMD 4兆位512KB的8,统一座低电压单电源闪 High Speed High Drive Precision Dual Operational Amplifier 8-SOIC CAP RF 1.0PF 250V 0603 SMD Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70 Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 512K X 8 FLASH 3V PROM, 150 ns, PQCC32 512K X 8 FLASH 3V PROM, 200 ns, PDSO32 512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
意法半导 STMicroelectronics N.V.
|
BH616UV8010TC BH616UV8010TI BH616UV8010TIG70 BH616 |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
IDT70T3539MS133BCI |
HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Technology, Inc.
|