PART |
Description |
Maker |
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
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DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 |
RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10 IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
|
Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC MAXIM - Dallas Semiconductor
|
PS2533-1 PS2533-1-V PS2533-2 PS2533-2-V PS2533-4 P |
High Collector To Emitter Voltage Photocoupler(高集电极到发射极电压光电耦合 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES
|
NEC Corp. NEC[NEC]
|
2SD1007 |
High collector to emitter voltage: VCEO 120V.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路 IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V From old datasheet system POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC Microprocessor Supervisory Circuits
|
Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm Maxim Integrated Products Inc MAXIM - Dallas Semiconductor
|
BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
|
Siemens Semiconductor G... Diotec Elektronische Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
2N5429 2N5430 |
COLLECTOR EMITTER VOLTAGE
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|
KCP56-16 |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|