| PART |
Description |
Maker |
| BGT24ATR11 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies A...
|
| BGT24MTR12 |
Silicon Germanium 24 GHz Transceiver MMIC
|
Infineon Technologies
|
| SGA-3563 SGA-3563Z |
SGA-3563 DC-5.0 GHz Cascadeable MMIC Amplifier
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier DC - 5000 MHz的硅锗MMIC放大器级联异质结双极晶体
|
Electronic Theatre Controls, Inc.
sirenza.com
|
| BGU7003 |
Wideband silicon germanium low noise amplifier MMIC
|
NXP SEMICONDUCTORS
|
| UPC3232TB UPC3232TB-E3 UPC3232TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| BGA61608 |
Silicon Germanium Broadband MMIC Amplifier
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGA61208 |
Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| BFP650F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| SGA-9289 |
Silicon Germanium HBT Amplifier
|
Stanford Microdevices
|
| SGA-7489 |
DC-3000 MHZ SILICON GERMANIUM
|
Electronic Theatre Controls, Inc.
ETC
Stanford Microdevices
|
