| PART |
Description |
Maker |
| W25Q80BVSSIG W25Q80BVSNIG W25Q80BVUXIG W25Q80BVZPI |
8M-BIT SERIAL FLASH MEMORY WIT DUAL AND QUAD SPI
|
Winbond
|
| PR103W PR103K PR134K PR101W PR114K PR105KW PR125K |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|800V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|400V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|12A I(T) 可控硅模块|交流开关| 1.2KV五（无线资源管理）| 12A条疙（T
|
Stackpole Electronics, Inc.
|
| HGT1S2N120BNS9A HGTD2N120BNS HGT1S2N120BNS HGTP2N1 |
12A, 1200V, NPT Series N-Channel IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|
| S48SA1R806PRFA S48SA1R806PTFB S48SA3R310PRFB DELTA |
Delphi Series S48SA, 33W Family DC/DC Power Modules: 48V in, 1.2V/12A out 德尔福系列S48SA3W系列DC / DC电源模块：在48V电压.2V/12A
Delphi Series S48SA, 33W Family DC/DC Power Modules: 48V in, 1.2V/12A out 德尔福系列S48SA33W系列DC / DC电源模块：在48V电压.2V/12A
|
Delta Electronics, Inc.
|
| STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CONNECTOR ACCESSORY
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
From old datasheet system
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N沟道绝缘栅双极型晶体
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 2 A, 1200 V, N-CHANNEL IGBT, TO-220AB
12 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SD1062 SD1062 |
POWER TRANSISTORS(12A,50V,40W) 功率晶体管（12A0V，功0W
POWER TRANSISTORS(12A/50V/40W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| TND027MP |
TRANSISTOR, NPN, TO-3PB; Transistor type:Power General Purpose; Voltage, Vceo:140V; Current, Ic continuous a max:12A; Voltage, Vce sat max:2.5V; hfe, min:60; ft, typ:15MHz; Case style:TO-3PB; Current, Ib:1.5A; Current, Ic av:12A; RoHS Compliant: Yes
Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| STGP12NB60H 6708 |
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
