| PART |
Description |
Maker |
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| K25N120 |
Fast IGBT in NPT-technology
|
Infineon Technologies
|
| SKW15N120 Q67040-S4281 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT Diode
FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE 在不扩散核武器条约快速IGBT技术与软，恢复快反平行Emcon二极
|
INFINEON[Infineon Technologies AG]
|
| SKB04N6007 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKP06N6007 SKA06N60 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
Infineon Technologies A...
|
| SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231 |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
