| PART |
Description |
Maker |
| K4S281632K |
128Mb K-die SDRAM
|
Samsung
|
| K4S281632K-UC_L50 K4S281632K-UC_L60 K4S280832K-UC_ |
128Mb K-die SDRAM Specification
|
Samsung semiconductor
|
| K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V.
http://
ST Microelectronics
|
| AM29F200BB-120DPI1 AM29F200BB-90DG1 AM29F200BB-90D |
128K X 16 FLASH 5V PROM, 70 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
|
SPANSION LLC
http://
|
| AM29LV200B03 AM29LV200BT-60RDRC AM29LV200BT-60RDRI |
128K X 16 FLASH 3V PROM, 70 ns, UUC43
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
|
SPANSION LLC
AMD[Advanced Micro Devices]
http://
|
| MT28C128532W18 |
(MT28C128532W18 / MT28C128564W18) 128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory
|
Micron Technology
|
| DOM44S6R1.5G HFDOM44S6RXXX DOM44S6R1G |
44Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 44Pin盘模块Min.128MBMax.4G，真IDE接口
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| K8P5616UZB |
256Mb B-die Page NOR FLASH
|
Samsung semiconductor
|
| K9F4G08U0D |
4Gb D-die NAND Flash
|
Samsung
|
| K9F2G08U0C |
2Gb C-die NAND Flash
|
Samsung
|
