PART |
Description |
Maker |
BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM 128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM 16K I2C?/a> Serial EEPROM The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C ... 16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
HT6116 HT6116-70 |
CMOS 2K8-Bit SRAM CMOS 2K??8-Bit SRAM CMOS 2Kx8-Bit SRAM
|
HOLTEK[Holtek Semiconductor Inc]
|
IS25C16-2CLI IS25C16-2GLI |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
INTEGRATED SILICON SOLUTION INC
|
IS93C66A-3PI IS93C56A-2PI IS93C56A-2PLI IS93C56A-2 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
Integrated Silicon Solution, Inc
|
24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM From old datasheet system CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
M58653P |
700 BIT ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
XL93LC56 XL93LC56A |
2048-Bit Serial Electrically EPROM
|
EXEL
|
IS93C66A-2PI IS93C56A-3ZLA3 IS93C66A-3ZLA3 IS93C56 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
|