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IS61DDP2B41M36AA1A2 - 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

IS61DDP2B41M36AA1A2_4814477.PDF Datasheet
 Full text search : 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
 Product Description search : 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM

 Related Part Number
PART Description Maker
IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A 2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
 Integrated Silicon Solution, Inc
K7M321825M K7M323625M K7N321801M-QC25 K7N323601M-Q 1Mx36 & 2Mx18 Flow-Through NtRAM 1Mx36
1Mx36 & 2Mx18 Flow-Through NtRAM
 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K7D321874A K7D323674A 1Mx36 & 2Mx18 SRAM
 Samsung Electronics
IS61QDPB41M36A2 1Mx36 and 2Mx18 configuration available
 Integrated Silicon Solu...
K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7 1Mx36 & 2Mx18 Flow-Through NtRAM
 Samsung semiconductor
K7N321801M-FC16 K7N321801M-FC20 K7N321801M-QC13 K7 1MX36 & 2MX18 PIPELINED NTRAM
 SAMSUNG[Samsung semiconductor]
K7K3236T2C K7K3218T2C 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
 Samsung semiconductor
K7K3236T2C K7K3218T2C 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
 Samsung semiconductor
K7I323682C K7I321882C 1Mx36 & 2Mx18 DDRII CIO b2 SRAM
 Samsung semiconductor
K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
 SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K7P321874C K7P323674C K7P323674C-HC300 1Mx36 & 2Mx18 SRAM
1M X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
 Samsung semiconductor
 
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