| PART |
Description |
Maker |
| RA07M1317MSA10 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA07M1317MSA-101 |
135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA60H1317M10 |
135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H1317M111 RA30H1317M1-201 |
RoHS Compliance, 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| M67741H 67741H M67741 |
RF POWER MODULE 150-175MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz /12.5V /30W / FM MOBILE RADIO
150-175MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
150-175MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RA08H1317 RA08H1317M RA08H1317M-01 RA08H1317M-E01 |
TV 2C 2#16 SKT RECP 135 - 175MHz瓦特12.5V便携移动通信
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:2; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric Sem...
|
| M67755L |
150-175MHz / 7.2V / 7W / FM PORTABLE RADIO
135-150MHz, 7.2V, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LB135DS01 |
135.42MHz Low-Loss SAWF 8MHz Bandwidth 135.42MHz低损耗声表面波滤波器带宽MHz
|
SIPAT Co., Ltd.
SIPAT Co,Ltd
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D1001UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应20W-28V-175MHz,单端))
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
