| PART |
Description |
Maker |
| 2N3562 |
SCR, V(DRM) = 200V TO 299.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| CS218I-50PBLEADFREE CS218I-50DLEADFREE CS218I-50PL |
50 A, 1200 V, SCR, TO-218
50 A, 400 V, SCR, TO-218
50 A, 1000 V, SCR, TO-218
50 A, 800 V, SCR, TO-218
50 A, 200 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 400 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 1000 V, SCR, TO-218
63 A, 1200 V, SCR, TO-65
63 A, 600 V, SCR, TO-65
63 A, 200 V, SCR, TO-65
110 A, SCR, TO-83
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| CS3P-40B CS3P-40P CS3P-40PB CS3P-40N CS3P-40M CS3P |
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 1200 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 1000 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 400 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 200 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 600 V, SCR
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| CS202-4D-2 CS202-4M-2 CS202-4B-2 CS202-4N-2 |
4.0 AMP SCR 200 THRU 800 VOLTS
Leaded Thyristor SCR
|
Central Semiconductor Corp
|
| T6200420 T6200230 T620143004DN T6200820 T6200630 T |
Phase Control SCR (200-300 Amperes 1600 Volts) 315 A, 800 V, SCR
|
Powerex Power Semicondu...
http://
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CS220-8N CS220-8B CS220-8D CS220-8M CENTRALSEMICON |
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 600 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 800 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 200 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 400 V, SCR, TO-220AB
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1.5AI（丙）|02
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一（c）|202
|
Analog Devices, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| SFS2326 SFS2328 SFS2329 |
1.6 AMPS 200 - 400 VOLTS SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-5
|
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| 2N5166 2N4147 2N1600 2N1598 2N893 2N899 |
20 A, 400 V, SCR
0.25 A, 100 V, SCR, TO-52
8 A, 50 V, SCR, TO-64
1.6 A, 300 V, SCR, TO-5
0.25 A, 15 V, SYMMETRICAL GTO SCR, TO-18
0.25 A, 100 V, GATE TURN-OFF SCR, TO-18
|
SEMITRONICS CORP
|
|
