| PART |
Description |
Maker |
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| HM65W8512 |
4 M PSRAM (512-kword ×8-bit)(4 M PSRAM (512k×8) 4个M移动存储芯片12 KWord的8位）个M移动存储芯片（为512k字8位）
|
Hitachi,Ltd.
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| S71PL129JC0_06 S71PL129JA0 S71PL129JB0 S71PL129JC0 |
Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory
|
SPANSION[SPANSION]
|
| AM70PDL127BDH85I AM70PDL129BDH AM70PDLI27BDH AM70P |
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
|
SPANSION[SPANSION]
|
| CS19208CBI |
OC-192/48/12/3 DW/FEC/PM and ASYNC Mapper Device
|
Applied Micro Circuits Corporation
|
| CY7C188-25VC CY7C188-15VC CY7C188-35VC CY7C188 CY7 |
Memory : Async SRAMs
32K x 9 Static RAM
|
CYPRESS[Cypress Semiconductor]
|
| 9250A-184-RC 9250A-107-RC 9250A-331-RC 9250A-333-R |
CHOKE RF MOLDED 180UH FERRITE 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 100000UH FERRITE 1 ELEMENT, 100000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED .33UH PHENOLIC 1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 33UH FERRITE 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 1.5UH IRON 1 ELEMENT, 1.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Choke, Axial Molded 1 ELEMENT, 39000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Choke, Axial Molded 1 ELEMENT, 0.68 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 3300UH FERRITE 1 ELEMENT, 3300 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Choke, Axial Molded 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 150UH FERRITE 1 ELEMENT, 150 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 8200UH FERRITE 1 ELEMENT, 8200 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 6800UH FERRITE 1 ELEMENT, 6800 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 82UH FERRITE 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 22000UH FERRITE 1 ELEMENT, 22000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED .15UH PHENOLLIC 1 ELEMENT, 0.15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.47 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
CHOKE RF MOLDED 33000UH FERRITE
CHOKE RF MOLDED 1000UH FERRITE
|
Bourns, Inc.
BOURNS INC
|
| AM70PDL127BDH66IS AM70PDL127BDH66IT AM70PDL127BDH8 |
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) 堆叠式多芯片封装（MCP / XIP）的快闪记忆体，数据存储的MirrorBit闪存和移动存储芯片（XIP）的
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS 2 × 64兆位米16位）的CMOS 3.0伏特，只有页面模式闪存数据存28兆位米16位）的CMOS
|
Spansion, Inc.
Spansion Inc.
|
| M69KB128AB |
Burst PSRAM
|
STMicroelectronics
|
| SST32HF32A1-70-4E-LSE SST32HF32A1-70-4C-LS SST32HF |
Multi-Purpose Flash Plus PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA62
Multi-Purpose Flash Plus PSRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA63
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
|
