PART |
Description |
Maker |
IRFB4310GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
IRFH7928PBF |
HEXFETPower MOSFET
|
International Rectifier
|
IRFB4410ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
IRF8915 |
HEXFETPower MOSFET
|
http:// IRF[International Rectifier]
|
IRLRU3103PBF |
HEXFETPower MOSFET
|
International Rectifier
|
IRF1010EPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
IRLML2244TRPBF |
HEXFETpower MOSFET RoHS compliant containing no lead, no bromide and no halogen
|
TY Semiconductor Co., Ltd
|
IRLML0030TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
IRF7342PBF |
HEXFETPower MOSFET (VDSS = -55V , RDS(on) = 0.105 ㈢的HEXFET功率MOSFET(减振钢板基本\u003d - 55V的,的RDS(on)\u003d 0.105ヘ)
|
International Rectifier, Corp.
|
IRFML8244TRPBF |
HEXFETpower MOSFET Multi-vendor compatibility Easier manufacturing Easier manufacturing
|
TY Semiconductor Co., Ltd
|
FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 500V, 24A, 0.19ヘ N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|