PART |
Description |
Maker |
LT3651-4.1 LT3651IUHE-4.2PBF |
Monolithic 4A High Voltage Monolithic 4A High Voltage BATTERY CHARGE CONTROLLER, 1100 kHz SWITCHING FREQ-MAX, PQCC36
|
LINEAR TECHNOLOGY CORP
|
IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBH16N170A IXBT16N170A |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
C9016-2X C90.6-2X |
HIGH-SPEED GATED IMAGE INTENSIFIER UNITS
|
Hamamatsu Corporation
|
ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd. Hitachi Semiconductor
|
TPD4113AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|