PART |
Description |
Maker |
MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
AP25G45EM |
N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp.
|
SSM28G45EM |
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
|
Silicon Standard Corp.
|
AP28G40GEO |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
SSM20G45EGH SSM20G45EGJ |
N-channel Insulated-Gate Bipolar Transistor
|
Silicon Standard Corp.
|
18T10 18T10G-TN3-R 18T10G-TN3-T 18T10L-TN3-R 18T10 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Unisonic Technologies
|
AP25G45GEM |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|