| PART |
Description |
Maker |
| FCD620N60ZF FCD620N60ZFCT-ND |
N-Channel SuperFETII FRFETMOSFET 600V, 7.3A, 620m
FCD620N60Z FN-Channel SuperFET II FRFET MOSFET 600 V 7.3 A 620 mΩ
|
Fairchild Semiconductor
|
| FCP380N60 FCPF380N60 FCP380N6013 |
N-Channel SuperFETII MOSFET 600V, 10.2A, 380m
N-Channel SuperFET II MOSFET
|
Fairchild Semiconductor
|
| FCH043N60 |
N-Channel SuperFET II MOSFET
|
Fairchild Semiconductor
|
| FCP190N6013 FCPF190N60 |
N-Channel SuperFET II MOSFET
|
Fairchild Semiconductor
|
| FCP190N60-GF102 |
N-Channel SuperFET? II MOSFET
|
Fairchild Semiconductor
|
| FCH110N65F |
N-Channel SuperFET? II FRFET? MOSFET
|
Fairchild Semiconductor
|
| FCH190N65F-F085 FCH190N65F-F085-15 |
N-Channel SuperFET II FRFET MOSFET
|
Fairchild Semiconductor
|
| FCH47N60F FCH47N60F13 FCH47N60FF133 |
N-Channel SuperFET FRFET MOSFET
|
Fairchild Semiconductor
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
| FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
