| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| ESN26A030MK EGN26A030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A090IV |
High Voltage - High Power GaN-HEMT
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| EGN21A180IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| CLF1G0035S-50 CLF1G0035-50 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| TGF2023-05 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-01 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
