| PART |
Description |
Maker |
| MSM5718B70 |
18-Megabit RDRAM (2M x 9)
|
OKI electronic components
|
| MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM
From old datasheet system
(MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM
18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets]
OKI electronic components
|
| HY5R256HCXXX HY5R256HC745 |
RDRAM
|
Hynix Semiconductor
|
| K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG[Samsung semiconductor]
|
| AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位）2兆位米16位）.0伏的CMOS只，同时作业闪存，和
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Xilinx, Inc.
Spansion, Inc.
|
| MSM5716C50 |
(MSM5716C50 / MSM5718C50 / MSM5764802) 16M / 18M / 64M Concurrent RDRAM
|
OKI
|
| K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT45BR3214B AT45BR3214B-C1 |
32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
|
Atmel Corp.
|
| KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| AT28C010-12JC AT28C010-12JI AT28C010-12PC AT28C010 |
From old datasheet system
1 Megabit (128K x 8)
1 Megabit 128K x 8 Paged CMOS E2PROM
|
ATMEL Corporation
|
