| PART |
Description |
Maker |
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM
SRAM MCP
SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3
15ns; 3.3V power supply; 128K x 24 SRAM
|
Electronic Theatre Controls, Inc.
White Electronic Designs
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| AS7C251MFT18A AS7C251MFT18A-75TQC AS7C251MFT18A-75 |
2.5V 1M x 18 flowthrough burst synchronous SRAM 1M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2.5V 1M x 18 flowthrough burst synchronous SRAM 1M X 18 STANDARD SRAM, 10 ns, PQFP100
High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125
Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
Everlight Electronics Co., Ltd.
ALSC
Alliance Semiconductor Corporation
|
| GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM
12ns 100MHz 32K x 32 1Mb synchronous burst SRAM
10ns 133MHz 32K x 32 1Mb synchronous burst SRAM
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM
9ns 150MHz 32K x 32 1Mb synchronous burst SRAM
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100
32K x 32 1M Synchronous Burst SRAM
|
GSI Technology, Inc.
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A |
SRAM - 3.3V Fast Asynchronous
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28
Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
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