PART |
Description |
Maker |
MCR08BT1 MCR08B MCR08MT1 MCR08BT1-D |
Sensiteve Gate Silicon Controlled Rectifier Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET 金属门射频硅场效应管 METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
MCR72-8 MCR72-3 MCR72-6 ON1829 MCR72-D |
Sensitive Gate Silicon Controled Rectifiers Reverse Blocking Thyristor SCRs 8 AMPERES RMS 100 thru 600 VOLTS SENSITIVE GATE SILICON CONTROLLED RECTIFIERS From old datasheet system
|
ONSEMI[ON Semiconductor]
|
S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State ETC[ETC]
|
IW4023BD IW4023BN |
Triple 3-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
KK74ACT20 KK74ACT20D KK74ACT20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
KK74ACT00 KK74ACT00D KK74ACT00N |
Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MC74AC00-D |
Quad 2-Input NAND Gate High-Performance Silicon-Gate CMOS
|
ON Semiconductor
|
KK74AC00 |
Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|