| PART |
Description |
Maker |
| ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins
From old datasheet system
250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp.
Atmel Corp
|
| ATF22LV10CZ ATF22LV10CZCQZ |
ATF22LV10CZ(CQZ) [Updated 9/01. 13 Pages] 500 gate. wide 3V to 5.5V supply range. zero power electrically erasable PLD. 24 pins
|
Atmel Corp
|
| PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array
15ns programmable electrically erasable logic array
Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM
256×8 bit electrically erasable PROM
256?8 bit electrically erasable PROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| BR24L64F-W BR24L64-W1 |
8k】8 bit electrically erasable PROM
8k隆驴8 bit electrically erasable PROM
|
Rohm
|
| BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L |
1024×8 bit electrically erasable PROM
1024 bit electrically erasable PROM 1024位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| 18CV8PC |
Electrically Erasable Programmable Logic
|
Gould
|
| GAL22LV10C-7LJ GAL22LV10D-5LJ |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
| GAL26CV12C-10LJ GAL26CV12C-10LP |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
|
