| PART |
Description |
Maker |
| TM1-9 |
RF IMPEDANCE TRANSFORMER
|
SYNERGY MICROWAVE CORPORATI...
|
| MABA-007902-CF38A0 MABA-007902-CF38TB |
2.56:1 Impedance Ratio Center Tapped Transformer 5-65 MHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| TM4-GT |
RF IMPEDANCE TRANSFORMER SURFACE MOUNT MODEL WIDE BANDWIDTH 5 - 1000 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| TM1-6 |
RF IMPEDANCE TRANSFORMER SURFACE MOUNT MODEL WIDE BANDWIDTH 5 - 3000 MHz
|
SYNERGY MICROWAVE CORPORATION
|
| 2SK246 E001482 |
FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-DC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS
From old datasheet system
|
Toshiba
|
| 2SK246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Semiconductor
|
| C1099-ALD C1099-ALB |
PoE transformer, for MAX5941A, SMT, RoHS SMPS TRANSFORMER
Flyback Transformer
|
Coilcraft, Inc.
Coilcraft lnc.
|
| 500L-058X181-502 500T-058X071-501 500T-058X071-502 |
5000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
500:5 A, 2 % ACCURACY CLASS, CURRENT TRANSFORMER
4000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
400:5 A, 3 % ACCURACY CLASS, CURRENT TRANSFORMER
750:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
2500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1000:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1200:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
1500:5 A, 1 % ACCURACY CLASS, CURRENT TRANSFORMER
|
GE Industrial Systems
|
| DVJL10006.3-LF DVJL1006.3-LF DVJL22010-LF DVJL2206 |
SURFACE MOUNT SMD - 105C LOW IMPEDANCE DVJL
SMD - 105°C LOW IMPEDANCE
SMD - 105°C LOW IMPEDANCE
|
Dubilier
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| HS-22620RH HS0-22620RH-Q HS9-22620RH HS9-22620RH/P |
Rad Hard Dual/ Wideband/ High Input Impedance Uncompensated Operational Amplifier
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational
Amplifier(抗辐射宽带、高非补偿输入阻抗运算放大器)
Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier DUAL OP-AMP, 6000 uV OFFSET-MAX, 100 MHz BAND WIDTH, UUC18
|
Intersil Corporation
Intersil, Corp.
|
