| PART |
Description |
Maker |
| IRS23364DPBF |
HIGH VOLTAGE 3 PHASE GATE DRIVER IC 3相高压栅极驱动器集成电路
|
International Rectifier, Corp.
|
| BU4069F BU4069FV BU4069UB-E2 BU4069UBF-E2 BU4069UB |
4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, PDSO14
High Voltage CMOS Logic ICs
High Voltage CMOS Logic ICs Gate
|
http://
Rohm
|
| CAT24FC256 CAT24FC256JA CAT24FC256JE CAT24FC256JI |
256K-Bit I2C Serial CMOS EEPROM 256K位I2C串行CMOS EEPROM
LM5100/LM5101 High Voltage High Side and Low Side Gate Driver; Package: LLP; No of Pins: 10 256K位I2C串行CMOS EEPROM
LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers; Package: LLP; No of Pins: 10
LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers; Package: SOIC NARROW; No of Pins: 8
Serial EEPROM, Full Array Write Protect, 256Kb, 400kHz
|
ITT, Corp.
NXP Semiconductors N.V.
CATALYST[Catalyst Semiconductor]
|
| KK4011BD KK4011BN |
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| IW4070BD IW4070B |
Quad Exclusive-OR Gate High-Voltage Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
| IW4025B IW4025BD IW4025BN |
Triple 3-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
| KK4002BD KK4002B KK4002BN |
Dual 4-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| TC74LCX00FT TC74LCX00F TC74LCX00FN |
High Speed CMOS Low Voltage 2 Input NAND Gate(高速CMOS低电压２输入与非 高速CMOS低压二输入与非门（高速的CMOS低电压二输入与非门）
LOW-VOLTAGE QUAD 2-INPUT NAND GATE WITH 5V TOLERANT INPUTS AND OUTPUTS
|
Toshiba, Corp.
Toshiba Semiconductor
|
| IW4001B IW4001BD IW4001BN |
Quad 2-input NOR gate, high-voltage silicon-gate CMOS
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
ETC[ETC]
INTEGRAL JOINT STOCK COMPANY
|
| LTC3735 LTC3850-1 LTC3850-2 LTC3869-2 LTC3816 LTC3 |
2-Phase, High Efficiency DC/DC Controller for Intel Mobile CPUs
2-Phase, High Efficiency DC/DC Controller with On-Chip Gate Drivers for Intel Mobile CPUs 5 A DUAL SWITCHING CONTROLLER, 610 kHz SWITCHING FREQ-MAX, PQCC38
|
Linear Technology, Corp.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
