| PART |
Description |
Maker |
| BB857 Q62702-B0897 Q62702-B0893 |
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q62702-B195 BBY35F Q62702-A775 |
From old datasheet system
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V)
Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
SCREWDRIVER SET, 7 PCSCREWDRIVER SET, 7 PC; Kit contents:Slotted 75 4mm, 100 5.5mm, 150 6.5mm, Parallel 75 3mm, Phillips 60 No.0, 80 No.1, 100 No.2
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) 硅肖特基二极管（搅拌机应用甚高频/超高频范围高速开关）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B599 BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Group
|
| BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
|
INFINEON[Infineon Technologies AG]
|
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-02L BBY51 BBY51-03W BBY51-02W |
Silicon Tuning Diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
|
INFINEON[Infineon Technologies AG]
|
| BBY52-02W |
Varactordiodes - Silicon high Q hyperband tuning diode
|
Infineon
|
| 2SD1474 |
Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5954 2SC5954P 2SC5954Q |
Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio
|
PANASONIC[Panasonic Semiconductor]
|
