PART |
Description |
Maker |
K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM x8 SDRAM x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
UPD45128441G5-A10BL9JF UPD45128841G5-A10BL9JF UPD4 |
x8 SDRAM x16 SDRAM x4 SDRAM x4内存
|
Elpida Memory, Inc.
|
MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM
|
Micron Technology
|
MT40A512M16JY-075EAIT MT40A512M16JY-083E |
8Gb: x4, x8, x16 DDR4 SDRAM Automotive DDR4 SDRAM
|
Micron Technology
|
HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp Winbond Electronics, Corp.
|
HY5V26CLF-8 HY5V26CLF-H HY5V26CLF-P HY5V26CLF-S HY |
x16 SDRAM x16内存
|
Hitachi,Ltd. Hynix Semiconductor, Inc.
|
HY57V281620ALT-H HY57V281620AT-6 HY57V281620AT-H H |
x16 SDRAM x16内存
|
Hynix Semiconductor, Inc.
|
MT47H16M16BG-3ITB |
256Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|