| PART |
Description |
Maker |
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
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ROHM[Rohm]
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| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
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CDIL[Continental Device India Limited]
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| 2SA1036K 2SA854 2SA854S 2SA1577 A5800307 |
Medium Power Transistor (-32V/ -0.5A) Medium Power Transistor (-32V, -0.5A) From old datasheet system Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| 2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) From old datasheet system Medium Power Transistor (-50V, -1A)
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ROHM
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| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
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CDIL[Continental Device India Limited]
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| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
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| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体 REVERSIBLE MOTOR DRIVER NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS HIGH VOLTAGE NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA) HIGH-FREQUENCY AMPLIFIER TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR SILICON PNP TRANSISTOR LOW FREQUENCY PNP TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR MEDIUM POWER TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 50 Amps, 60 Volts N-CHANNEL POWER MOSFET
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UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
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| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
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Continental Device India Limited
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| SG2823 SG2823J_DESC SG2823L_DESC SG2823N SG2803J S |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR POWERQUICC II HIP4 REV B From old datasheet system Driver - Medium Current Array
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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| 2N6123 2N6124 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. 40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE.
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Continental Device India Limited
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O 10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
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Continental Device India Limited
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