| PART |
Description |
Maker |
| FDD6680AS FDD6680AS08 |
30V N-Channel PowerTrench? SyncFET?/a>
30V N-Channel PowerTrench垄莽 SyncFET垄芒
30V N-Channel PowerTrench㈢ SyncFET⑩
|
Fairchild Semiconductor
|
| FDB6670S FDP6670S FDB6670SNL |
30V N-Channel PowerTrench SyncFET TM
30V N-Channel PowerTrench SyncFET TM
30V N-Channel PowerTrench? SyncFET
30V N-Channel PowerTrenchÒ SyncFET™
From old datasheet system
30V N-Channel PowerTrench SyncFET 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 1N5468B 1N5466B 1N5475D 1N5475C 1N5462C 1N5463A 1N |
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
Diode VAR Cap Single 30V 18pF 2-Pin DO-7
Diode VAR Cap Single 30V 82pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 20pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 47pF 2-Pin DO-7
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| CDBV3-54S-G CDBV3-54-G |
Small Signal Schottky Diodes, V-RRM=30V, V-R=30V, I-O=200mA
|
Comchip Technology
|
| CDBER42-HF CDBER43-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=30V, I-O=0.2A
|
Comchip Technology
|
| CDBZ0130L-HF |
Halogen Free Low VF Schottky Barrier, V-RRM=30V, V-R=30V, I-O=0.1A
|
Comchip Technology
|
| CDBER54-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=30V, I-O=0.2A
|
Comchip Technology
|
| 1N5441C 1N5450C 1N5442B 1N5443C 1N5456C 1N5454B 1N |
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 33pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| FDD6690S |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA
30V N-Channel PowerTrench SyncFET TM
|
Fairchild Semiconductor
|
| STT6602 |
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
|
SeCoS Halbleitertechnologie GmbH
|
| SB30-03P |
Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier
30V/ 3A Rectifier
|
Sanyo Semicon Device
|
