| PART |
Description |
Maker |
| FRDB-600-1 |
FRDB-600-1
|
DIOTEC Electronics Corporation
|
| 0805B201M601YHT 0805B122M601YHT 0805B121M601YHT 08 |
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0002 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0012 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.00012 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0015 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0011 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0013 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.002 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0016 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.001 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.00016 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.00018 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.00013 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.00015 uF, SURFACE MOUNT, 0805 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 600 V, X7R, 0.0018 uF, SURFACE MOUNT, 0805 CHIP
|
Novacap
|
| BT136-600E127 |
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 600 V; Package: week 1, 2005 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
|
NXP Semiconductors N.V.
|
| FCD600N60Z |
N-Channel SuperFETII MOSFET 600 V, 7.4 A, 600 m
|
Fairchild Semiconductor
|
| 2N2904 JANTX2N2905A JAN2N2904 JAN2N2905 2N2904A 2N |
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
PNP Transistor
PNP SWITCHING SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
3 Pin 1.5A Fixed 12V Positive Voltage Regulator 3-TO-220 0 to 125 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
MICROSEMI CORP-LAWRENCE
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SMBG33A SMBG33 SMBJ7.0A SMBJ5.0A SMBJ6.0A SMBJ9.0A |
SURFACE MOUNT 600 Watt Transient Voltage Suppressor 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA
SURFACE MOUNT 600 Watt Transient Voltage Suppressor 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
MS3470L14-4S
MS3470L14-4P
CMOS Strobed Hex Inverter/Buffer with 3-State Outputs 16-TSSOP -55 to 125
SURFACE MOUNT 600 Watt Transient Voltage Suppressor
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| NDL5551 NDL5551P NDL5551P1C NDL5551P1D NDL5551P2C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信50毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| SDR656CTMZ SDR656CTM SDR656CTZ |
40 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA
40AMPS 600 VOLTS 30 nsec HYPER FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| CM30TF-12H |
122 x 32 pixel format, LED Backlight available 30 A, 600 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 30 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| BCR1AM BCR1AM-8 BCR1AM-12 |
Lead-Mount Triac 1 Ampere/400-600 Volts 600 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| SDR4006HFPTXV SDR4004HFNS SDR4004HFNTX SDR4004HFNT |
40 A, 600 V, SILICON, RECTIFIER DIODE
40A 35nsec 400 to 600 V Hyper Fast Rectifier
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
|
