PART |
Description |
Maker |
BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL N-Channel SIPMOS Power Transistor
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Infineon
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BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL SIPMOS Power Transistor
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Infineon Technologies AG
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SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
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INFINEON[Infineon Technologies AG]
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SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL OptiMOS Power-Transistor 的OptiMOS功率晶体 80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
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INFINEON[Infineon Technologies AG]
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ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode 4A, 600V Stealth Diode 4A 600V Stealth Diode 4A, 600V Stealth⑩ Diode 4A, 600V StealthDiode
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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MIC94040 MIC94040YFL MIC94041 MIC94041YFL MIC94042 |
28mΩ RDSON 3A High Side Load Switch in 1.2mm x 1.2mm MLF? package 28mΩ RDSON 3A High Side Load Switch in 1.2mm x 1.2mm MLF package 28mヘ RDSON 3A High Side Load Switch in 1.2mm x 1.2mm MLF package
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Micrel Semiconductor
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IPB15N03L IPP15N03L 15N03L |
IPP15N03L OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL OptiMOS Buck converter series OptiMOS Buck converter series
|
INFINEON[Infineon Technologies AG]
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D1NF60 |
Super Fast Recovery Rectifiers(600V 0.8A) 超快速恢复(600V.8A
|
Shindengen Electric Mfg.Co.... Shindengen Electric Mfg.Co.Ltd Glenair, Inc.
|
SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
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IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package 600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
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IRF[International Rectifier]
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