PART |
Description |
Maker |
LM4050AEM3-3.0-T LM4050AEX3-3.0-T LM4050AEM3-4.1-T |
50ppm/C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages 50ppm/∑C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PDSO3
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Maxim Integrated Products, Inc.
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WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块 512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块 GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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ZB2BL4 ZB2BL2 ZB2BV6 ZB2BV3 ZB2BS54 ZB2BW84354 ZB2 |
CONTROL AND SIGNALLING UNITS DIODE TVS 75V 600W BIDIR 5% SMB DIODE TVS 36V 600W BI-DIR SMB 指示灯头 传奇\u0026#39;紧急停止\u0026#39; TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:33V; Breakdown Voltage, Vbr:36.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Surface Mount TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:13V; Breakdown Voltage, Vbr:14.4V; Package/Case:DO-214; Leaded Process Compatible LEGEND PLATE B>1-11 DIODE TVS 9.0V 600W UNI 5% SMB TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:30V; Breakdown Voltage, Vbr:33.3V; Peak Pulse Power PPK @ 10x1000uS:600W; Package TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:51V; Breakdown Voltage, Vbr:56.7V; Peak Pulse Power PPK @ 10x1000uS:600W; Package TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:18V; Breakdown Voltage, Vbr:20V; Peak Pulse Power PPK @ 10x1000uS:600W; Package Transient Surge Protection Thyristor; Leaded Process Compatible:Yes; Package/Case:DO-214; Mounting Type:Surface Mount; Polarization:Bipolar; Power Rating:600W; Type:TVS-Bidirectional; Voltage Rating:22V
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List of Unclassifed Man... Square D by Schneider Electric
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LM4050EX3-25 LM4050EX3-21 LM4051EX3-12 LM4050EM3-5 |
50ppmC Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown 50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PDSO3 50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.225 V, PDSO3 50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 3 V, PDSO3 50ppmC Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown
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http:// Maxim Integrated Products, Inc. Maxim Integrated Produc...
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BDH50 BDH20 BDH57 |
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:12V; Breakdown Voltage, Vbr:13.3V; Peak Pulse Power PPK @ 10x1000uS:600W; Package DIODE TVS 120V 600W BIDIR 5% SMB TVS Diode; TVS Polarization:Unidirectional; Stand-Off Voltage, VRWM:13V; Breakdown Voltage, Vbr:14.4V; Peak Pulse Power PPK @ 10x1000uS:600W; Package/Case:DO-214; Leaded Process Compatible:Yes; Mounting Type:Through Hole 保险
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Electronic Theatre Controls, Inc.
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RD10JS RD11JS RD12JS RD13JS RD15JS RD16JS RD18JS R |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode 8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 surface mount silicon Zener diodes 表面贴装硅稳压二极管 DO-34 Package Low noise/ Sharp Breakdown characteristics 400 mW Zener Diode DO-34 Package Low noise Sharp Breakdown characteristics 400 mW Zener Diode Constant Voltage diode 400mW DO-34
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NEC, Corp. NEC Corp. NEC[NEC]
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SOD-123 |
High Breakdown Voltage
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SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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S8050 |
Collector-base breakdown voltage
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TY Semiconductor Co., Ltd
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2SD814 2SD814A 2SD0814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)
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PANASONIC[Panasonic Semiconductor]
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STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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Electronics Industry Public Company Limited EIC Semiconductor EIC[EIC discrete Semiconductors] EIC discrete Semiconduc...
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