PART |
Description |
Maker |
CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|
2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB (2N6130 - 2N6134) NPN SILICON TRANSISTOR Leaded Power Transistor General Purpose Leaded Power Transistor Darlington
|
http:// ON Semiconductor Central Semiconductor Corp. Advanced Semiconductor CENTRAL[Central Semiconductor Corp] Central Semiconductor C...
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC[NEC]
|
MJ423_D ON1993 MJ423 |
POWER TRANSISTOR NPN SILICON From old datasheet system 10 AMPERE POWER TRANSISTOR NPN SILICON 125 WATTS
|
ONSEMI[ON Semiconductor]
|
FZT1047A |
NPN Low Sat Transistor NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR
|
Zetex Semiconductors Diodes Incorporated
|
MRF20060RS |
NPN Silicon RF Power Transistor(NPN硅射频功率晶体管) L BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(NPN纭??棰?????浣??)
|
Motorola Mobility Holdings, Inc. MOTOROLA INC
|
MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE. NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|