| PART |
Description |
Maker |
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BAV21W |
200mW SMD Fast Switch Diode Fast Switching Speed
|
First Components Intern...
|
| 1N4448HWT |
SURFACE MOUNT FAST SWITCHING DIODE
Switching Diodes
|
DIODES[Diodes Incorporated]
|
| BAS21T-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| BAS21W-7-F BAS20W-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| MMBD4148W-7-F MMBD4148W08 MMBD4148W-15 |
SURFACE MOUNT FAST SWITCHING DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| BAS16T-7-F BAW56T-7-F BAS16T09 BAV70T-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.155 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
http://
Diodes Incorporated
Diodes, Inc.
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SIDC110D170H Q67050-A4179-A001 |
200 A, 1700 V, SILICON, RECTIFIER DIODE
Fast switching diode chip in EMCON 3 -Technology
|
INFINEON[Infineon Technologies AG]
|
| IKW20N60T IKP20N60T IKB20N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft/fast recovery anti-parallel EmCon HE diode
IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
