PART |
Description |
Maker |
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
2SD768K |
Silicon NPN Darlington Transistor TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 6A I(C) | TO-220AB
|
Hitachi Semiconductor
|
ZTX605 ZTX604K |
NPN Darlington Transistor NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Zetex Semiconductors
|
BU941ZT BU941ZTFP 5288 BUB941ZT BUB941ZTT4 |
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-263 From old datasheet system HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] http://
|
MMBT6427LT1 MMBT6427LT3 MMBT6427LT1-D MMBT6427LT1G |
Darlington Transistor NPN Silicon Small Signal Darlington Darlington Transistor(NPN Silicon)
|
ON Semiconductor
|
MPSW4506 MPSH10RLRA MPSH17RLRAG MPSH17RLRA MPSW45G |
One Watt Darlington Transistors NPN Silicon VHF/UHF Transistors NPN Silicon CATV Transistor One Watt Darlington Transistor NPN Silicon Amplifier Transistor PNP Silicon
|
ONSEMI[ON Semiconductor]
|
D72FY4D2 D64DV7 |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-252AA TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 50A I(C) | TO-3 晶体管|晶体管|达林顿|叩| 500V五(巴西)总裁| 50A条一(c)|
|
Solid State Devices, Inc.
|
GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD GTM CORPORATION
|
CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|