| PART |
Description |
Maker |
| MA4X348 |
Silicon planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| MA3S781E |
Silicon epitaxial planar type (cathode common) 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| PF2007DF8 |
Silicon Planar Type Diode
|
KEC(Korea Electronics)
|
| MA2C188 MA188 |
Silicon epitaxial planar type 0.2 A, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA737 MA2Q737 |
Silicon epitaxial planar type 1.5 A, 30 V, SILICON, RECTIFIER DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MA3X200F |
Silicon epitaxial planar type 0.1 A, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| KTX401E |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| 1S1586 |
Silicon epitaxial planar type diode.
|
Panasonic
|
| 1S2095A |
SILICON EPITAXIAL PLANAR TYPE DIODE
|
TOSHIBA[Toshiba Semiconductor]
|
| KTX411TY KTX411T KTX411TGR |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
